CAS:12055-23-1丨Hafnium Oxide

Hafnium dioxide is a kind of ceramic material with wide band gap and high dielectric constant. Recently, it has attracted great attention in the industry, especially in the field of microelectronics, because it is likely to replace the gate insulation layer of gold Chemicalbook oxide semiconductor field effect tube (MOSFET), which is the core of silicon based integrated circuits. In order to solve the size limit problem of the development of traditional SiO2/Si structures in MOSFET.

For the production of metal hafnium and hafnium alloy raw material. Used as refractory, antiradioactive coating and catalyst.

CAS:12055-23-1

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